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| inchange semiconductor product specification silicon npn power transistors 2SC3322 description ? with to-3p(i) package ? high voltage ? high speed applications ? high power switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 5 a i cm collector current-peak 10 a i b base current 2.5 a p t total power dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outlin e (to-3p(i)) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3322 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ,l=100mh;r be = ?t 800 v v (br)ebo base-emitter breakdown voltage i e =10ma; i c =0 7 v v cesat collector-emitter saturation voltage i c =1.5a; i b =0.3a 1.0 v v be sat base-emitter saturation voltage i c =1.5a; i b =0.3a 1.5 v i cbo collector cut-off current v cb =750v; i e =0 100 | a i ceo collector cut-off current v ce =650v; r be = ?t 100 | a h fe-1 dc current gain i c =0.5a ; v ce =5v 15 h fe-2 dc current gain i c =3a ; v ce =5v 7 switching times t on turn-on time 1.0 | s t stg storage time 3.0 | s t f fall time i c =3a ; v cc ?? 250v i b1 =0.6a; i b2 =-1.5a 1.0 | s inchange semiconductor product specification 3 silicon npn power transistors 2SC3322 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm) |
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